EE 271 — Semiconductor Devices
BSc BSc Electrical/Electronic Engineering · Kwame Nkrumah University of Science and Technology
PN Junction: Junction diodes and their static and dynamic properties at high frequencies, switching. Metal-Semiconductor junctions: Energy band diagram of the Schottky barrier, MIS Schottky diode, ohmic contact, applications of Schottky-Barrier diodes, heterojunctions. Solar Cell and light-emitting diode: optical absorption in a Semiconductor, Photovoltaic effect, Schottky-barrier and MIS solar cells, LEDs, eye snsitivity and brightness, Quantum efficiency. MOS Devices: MOS capacitor, MOS transistor (DC characteristics, depletion - MOST and JFET). Polysilicon gate technology, Metal gate technology, comparison. Control of threshold voltage through iron implantation. Frequency and small signal properties of MOST, special MOS devices (CMOS, VMOS, DMOS, CCD). Examples of CCD in electro-optical applications and signal processing. Bipolar Junction Devices: The BJT transistor action, Ebers-Molls model, Hybrid-pi and h equivalent circuit, the BJT as a switch, breakdown voltages, lateral PNP transistor, PNPN devices, Noise source in BJT.
- Credits
- 2
- Level
- Year Two
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- EE 261 — Asynchronous & DC Machines
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- ENGL 263 — Literature in English I
- ENGL 264 — Literature in English II
- FREN 181 — French for Communication I
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Start freeCourse details from Details of Syllabus - Department of Electrical Engineering, KNUST.